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Model

MEL3100

Main body

Wafer size

3"～6"

Power
Supply

AC200V 3ph 40A

Wafer per batch

1 wafer

*two lines

Cassette

No.

25 wafers

Cooling
Water

15 (l/min)

Q'ty

1pc.

<20℃

Throughput

10 (wafer/hr) *1

CDA

0.5 (MPa)

Pressure

Ultimate

8×10-5 (Pa) *2

>10 (l/min)

Process

2×10-2 (Pa) *2

N2

0.2 (MPa)

Etching

Rate

>10 (nm/min)@SiO2 *3

>40 (l/min)

Uniformity

±5%@132mm (6") *3

Ar

0.2 (MPa)

Wafer surface temp.

<100℃ *3

20 (sccm)

Stage rotating

1～20 (rpm) ±5%

He

0.2 (MPa)

Stage tilting

±90°±0.5°

20 (sccm)

Dimension
W×D×H (mm)

Main body

1,600×2,175×1,900

*need additional utilities
  for Dry pump

Controller

640×610×1,900

Chiller

555×515×1,025

Weight (kg)

Main body

1,700

Controller

200

Chiller

100

*1: Estimated process time 5min

*2: No wafer on stege / process chamber

*3: Depending on process

射頻離子源型號(hào)

RFICP 380

Discharge 陽(yáng)極

射頻 RFICP

離子束流

>1500 mA

離子動(dòng)能

100-1200 V

柵極直徑

30 cm Φ

離子束

聚焦, 平行, 散射

流量

15-50 sccm

通氣

Ar, Kr, Xe, O2, N2, H2, 其他

典型壓力

< 0.5m Torr

長(zhǎng)度

39 cm

直徑

59 cm

中和器

LFN 2000